View BLA0912-250R_6762917.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description silicon n-channel enhancement mode ldmos transistor en capsulated in a 2-lead sot502a flange package with a ceramic cap. the common source is connected to the mounting flange. 1.2 features and benefits ? high power gain ? easy power control ? excellent ruggedness ? source on mounting base eliminates dc isolators, reducing common mode inductance. 1.3 applications ? avionics transmitter applications in the 960 mhz to 1215 mhz frequency range such as mode-s, tcas and jtids, dme or tacan. BLA0912-250R avionics ldmos power transistor rev. 3 ? 1 december 2010 product data sheet table 1. test information typical rf performance measured in common source class-ab test circuit at p l = 250 w and 960 mhz to 1215 mhz frequency band. t h = 25 c; z th(j-h) = 0.15 k/w; unless otherwise specified. mode of operation f t p v ds p l g p g p d p droop(pulse) t r t f z th(j-h) ? ins(rel) (mhz) ( s) % (v) (w) (db) (db) (%) (db) (ns) (ns) (k/w) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 5 tcas 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 5 mode-s 1030 to 1090 128 2 36 250 13.5 0.8 50 0.1 25 6 0.15 5 1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 5 jtids 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 5 caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 2 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics [1] thermal resistance is determi ned under rf operating conditions; t p = 100 s, = 10 %. table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 3 2 1 1 3 2 sym03 9 table 3. ordering information type number package name description version BLA0912-250R - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 75 v v gs gate-source voltage - 22 v p tot total power dissipation t h 25 c; t p =50 s; =2% - 700 w t stg storage temperature ? 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions typ unit z th(j-h) transient thermal impedance from junction to heatsink t h = 25 c [1] 0.18 k/w
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 3 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 6. characteristics 6.1 ruggedness in class-ab operation the BLA0912-250R is capable of withstand ing a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =36v; f = 960 mhz to 1215 mhz at rated load power. table 6. dc characteristics t j = 25 c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =3ma 75 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d =300ma 4 - 5 v i dss drain leakage current v gs =0v; v ds =36v--1 a i dsx drain cut-off current v gs =v gsth +9 v; v ds =10v 45 - - a i gss gate leakage current v gs =20v; v ds =0v--1 a g fs forward transconductance v ds =10v; i d =10a - 9 - s r ds(on) drain-source on-state resistance v gs =9v; i d =10a - 60 - m table 7. rf characteristics rf performance in common source class-ab circuit; t h = 25 c; z th = 0.15 k/w; unless otherwise specified. symbol parameter conditions min typ max unit v ds drain-source voltage - - 36 v f frequency 960 - 1215 mhz p l output power t p =100 s; = 10 % 250 - w g p power gain p l = 250 w 12 13 db d drain efficiency t p =100 s; = 10 % 40 50 % z th(j-h) transient thermal impedance from junction to heatsink t p =100 s; =10%--0.2k/w t h heatsink temperature ? 55 - +70 c p droop(pulse) pulse droop power t p =100 s; =10% - 0.1 0.5 db resp(sp) spurious response vswr load =2:1 - - ? 60 dbc t r rise time - 25 50 ns t f fall time - 6 25 ns
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 4 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 7. application information 7.1 impedance information 7.2 application circuit table 8. typical impedance typical values per section unless otherwise specified. f z s z l mhz 960 0.89 ? j1.70 1.53 ? j1.13 1030 1.37 ? j1.23 1.47 ? j0.99 1090 2.09 ? j1.27 1.38 ? j0.85 1140 2.40 ? j1.97 1.30 ? j0.71 1215 1.51 ? j2.61 1.17 ? j0.47 fig 1. definition of transistor impedance 001aaf05 9 drain z l z s gate see table 9 for details of striplines. fig 2. layout of class-ab application circuit 001aab08 5 c4 c3 c2 l5 l6 l4 c1 l3 l2 l1 l8 l7 c5
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 5 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor table 9. layout details see figure 2 . striplines are on a rodgers duroid 6010 printed-circuit board (pcb); r = 10.2 f/m; thickness = 0.64 mm component description dimensions input circuit l1 stripline 5 mm 0.8 mm c1 stripline 1.2 mm 3.5 mm l2 stripline capacitor pad: 1 mm 1 mm (1 ) curve: width 0.8 mm; angle 90 ; radius 0.8 mm (10 ) vertical: 3.9 mm 0.8 mm (2 ) vertical: 9.4 mm 0.8 mm (3 ) horizontal: 0.5 mm 0.8 mm (4 ) l3 stripline 3 mm 2 mm c2 stripline 4 mm 6.5 mm l4 stripline 5 mm 1 mm c3 stripline 8.8 mm 30 mm + 0.2 mm 13 mm output circuit c4 stripline 0.2 mm 13 mm + 19 mm 17.1 mm l5 stripline 2.5 mm 2.3 mm l6 stripline 4 mm 1 mm c5 stripline 3 mm 6.6 mm l7 stripline curve: width 0.8 mm; angle 90 ; radius 0.8 mm (6 ) vertical: 2.2 mm 0.8 mm (2 ) vertical: 6 mm 0.8 mm (1 ) horizontal: 1 mm 0.8 mm (2 ) l8 stripline 2.5 mm 0.8 mm 1/4 line stripline curve: width 1 mm; angle 90 ; radius 0.8 mm vertical: 5 mm 1 mm horizontal: 19 mm 1 mm
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 6 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor [1] american technical ce ramics type 100b or capacitor of same quality. [2] american technical ce ramics type 100a or capacitor of same quality. dimensions in mm. see table 10 for list of components. fig 3. component layout for class-ab application circuit table 10. list of components see figure 3 . component description value remarks c1, c3, c9 multilayer cera mic chip capacitor 1 nf [1] c2, c6, c10 multilayer ceramic chip capacitor 22 pf [2] c4 tantalum smd capacitor 47 f; 20 v kemet: t491d476m020as c5 multilayer ceramic chip capacitor 56 pf [2] c7 multilayer ceramic chip capacitor 47 pf [2] c8 tantalum smd capacitor 22 f; 63 v r1 smd resistor 51 0805 r2 resistor 49.9 001aab08 3 c1 c2 c6 c7 c3 r1 r2 c4 c5 c8 c10 c9 40 40 60
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 7 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 8. test information 8.1 rf performance typical rf performance measured in common source class-ab test circuit at p l = 250 w and 960 mhz to 1215 mhz frequency band. t h = 25 c; z th(j-h) = 0.15 k/w; unless otherwise specified. t h = 25 c; v ds = 36 v; i dq = 150 ma; class-ab; t p = 100 s; =10%. t h =25 c; v ds =36v; i dq = 150 ma; class-ab; t p = 100 s; =10%. (1) f = 960 mhz (2) f = 1030 mhz (3) f = 1090 mhz (4) f = 1140 mhz (5) f = 1215 mhz fig 4. power gain and drain efficiency as function of frequency; typical values fig 5. power gain as a function of load power; typical values 001aab078 f (mhz) 940 1240 1140 1040 990 1190 1090 9 11 7 13 15 g p (db) 5 25 35 15 45 55 d (%) 5 g p d 001aab079 p l (w) 0 300 200 100 10 6 14 18 g p (db) 2 4 8 12 16 (1) (4) (3) (2) (5)
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 8 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor t h =25 c; v ds =36v; i dq = 150 ma; class-ab; t p = 100 s; =10%. (1) f = 960 mhz (2) f = 1030 mhz (3) f = 1090 mhz (4) f = 1140 mhz (5) f = 1215 mhz t h =25 c; v ds =36v; i dq = 150 ma; class-ab; t p = 100 s; =10%. (1) f = 960 mhz (2) f = 1030 mhz (3) f = 1090 mhz (4) f = 1140 mhz (5) f = 1215 mhz fig 6. load power as a function of input power; typical values fig 7. efficiency as a function of load power; typical values p i (w) 0 6 10 14 216 12 48 001aab080 100 200 300 p l (w) 0 (5) (2) (1) (3) (4) 50 150 250 001aab081 p l (w) 0 300 200 100 50 150 250 20 40 60 0 50 30 10 d (%) (5) (1) (3) (2) (4)
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 9 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 9. package outline fig 8. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502 a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 10 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 10. abbreviations 11. revision history table 11. abbreviations acronym description dc direct current dme distance measuring equipment jtids joint tactical information distribution system ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor mode-s mode select rf radio frequency smd surface mounted device tacan tactical air navigation tcas traffic collision avoidance system vswr voltage standing-wave ratio table 12. revision history document id release date data sheet status change notice supersedes BLA0912-250R v.3 20101201 product data sheet - BLA0912-250R v.2 modifications: ? table 10 on page 6 : the remark of component c8 has been removed. ? table 10 on page 6 : the value of component c8 has been specified in more detail. BLA0912-250R v.2 20101015 product data sheet - BLA0912-250R v.1 BLA0912-250R v.1 20100303 product data sheet - -
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 11 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLA0912-250R all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 1 december 2010 12 of 13 nxp semiconductors BLA0912-250R avionics ldmos power transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLA0912-250R avionics ldmos power transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 1 december 2010 document identifier: BLA0912-250R please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 application circuit . . . . . . . . . . . . . . . . . . . . . . . 4 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

▲Up To Search▲

Price & Availability of BLA0912-250R

	To Download BLA0912-250R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .